Dear Bernd,
Thank you for your reply.
I have read it and tried it in MICRess. There is no problem with the code now. However, I do not quite understand how to deal with my simulation. The following is what I find on the thread:
# How shall diffusion of component 1 in phase 1 be solved?
1 1 multi gg
# How shall diffusion of component 2 in phase 1 be solved?
2 1 multi gg
# How shall diffusion of component 1 in phase 1 be solved?
1 1 +b nnbn
# Grain boundary diffusion settings for component
# 1 at boundary of phases 1 and 2:
Correction for activation energy? [J/mol]
1.8E3
Physical width of the interface? [nm]
2.5
...
end_diffusion_data
My simulation is about the process of pearlite cooperative growth. I want to check the partition of Alloying element in the moving interface, so grain boundary diffusion between ferrite and austenite(this can be done) and between cementite and austenite(this is not easy) should be considered. Since cementite is a stoichiometric phase, diffusion in cementite is not expected, does this necessarily mean that I can only consider Grain boundary diffusion at boundary of phases fcc and cem while not at boundary of phases cem and fcc?
Also, will the selection of the width of the interface greatly influence the simulation result? As the grid is rescaled, I think the width is not that important, 1-2nm is a good approximation, am I right?
Best wishes!
Yang Zenan